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By N2H

Toshiba Achieves Higher Hole Mobility for Future Generation CMOS Technology by Twisted Direct Silicon Bonding Technology (Business Wire via Yahoo! Finance)

Toshiba News Add comments

TOKYO—-Toshiba Corporation today announced that, together with IBM Corporation, it has developed a higher performance CMOS FET, a high priority for advanced system LSI. The new technology matches the highest possible performance, and opens the way for further advances in process technology.

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